本文始于2024年05月，主要记录日常工作或生活中遇到不认识的IC英文缩写单词，以便后续查阅。
2024/06/16：增加Package相关常见英文单词，并新增目录，提高阅读方便性；
2024/07/01：重新调整单词排列顺序，以单词首字母A-Z进行排序，方便查询。
1. IC 常见英文单词缩写
1.1 原理图设计相关
LSB—Least Most Significant Bit 最低有效位
LPF—Low-Pass Filter 低通滤波器
MSB—Most Significant Bit 最高有效位
SAR ADC—Successive Approximation Register Analog to Digital Converter 逐次逼近寄存器数模转换
TIA—Transimpedance Amplifier 跨阻放大器
VLSI—Very Large Scale Integration 超大规模集成电路
1.2 软件相关
1.2.1 Virtuoso软件相关
ADE—Analog Design Environment
AMS—Analog Mixed Signal
CDL—Circuit Description Language
CDF—Component Description Format
CIW—Cadence Interaction Windows
CWD—Current Working Directory
DRD—Design Rule Driven
LSW—Layer Selection Windows
LPP—Layer-purpose pairs
LEF—Library Exchange Format
P-Cell—Parameterized Cells
ROD—Relative Object Design
1.2.2 Calibre软件相关
CCI—Calibre Connectivity Interface
DRM—Design Rule Manage
DRC—Design Rules Check 设计规则检查
ERC—Electrical Rule Check 电气规则检查
LPE—Layout Parasitic Extraction
LVS—Layout Versus Schematic 版图和原理图比对
PEX—Post Extract 后抽取
PERC—Programmable Electrical Rules Check 可编程电气规则检查
RVE—Results Viewing Environment
1.3 工艺相关
BEOL—Back-end of layout—after contact，m1、v1、m2、v2…..passivation、AP、RV
CP—Chip Probing
CMOS—Complementary Metal-Oxide-Semiconductor
CMP—Chemical Mechanical Polishing 化学机械抛光
CVD—Chemical Vapor Deposition 化学蒸汽沉积
DFM—Design For Manufacture
DFT—Design For Test
DUT—Device Under Test 被测器件
DTI—Deep Trench Isolation 深槽隔离（new add）
EM—Electro Migration 电迁移
ESL—Etch Stop Layer 蚀刻停止层
FEOL—Front-end of layout—before contact，that is NW、AA（OD/DIFF）、PO、NN、NP….
FinFET—Fin Field-Effect Transistor
FIB—Focused Ion Beam聚焦离子束（失效分析的一种）
HCI—Hot Carrier Inject 热载流子注入
ICT—Interconnect Technology
ITF—Interconnect Technology Format
LPCVD—Low Pressure Chemical Vapor Deposition 低压化学汽相沉积
LOCOS—Local Oxidation of Silicon 硅局部氧化
LDD—Lightly Doped Drain 轻掺杂漏
LOD—Length of Diffusion effect
LDD—Lightly Doped Drain 轻掺杂漏
MPW—Multi-Production Wafer
MOM—Metal Oxide Metal 金属-氧化物-金属电容
Mono-Si—Monocrystalline Silicon 单晶硅
OPC—Optical Proximity Correction光掩膜校准
OSE—OD Space Effect
OTP—Over Temperature Protection 过温保护
PDK—Process Design Kit
PECVD—Plasma Enhanced Chemical Vapor Deposition 等离子体增强化学汽相沉积
PVD—Physical Vapor Deposition 物理汽相沉积
PSE—Poly Space Effect
PVT—Process/Voltage/Temperature
Poly-Si—Polycrystalline Silicon 多晶硅
RDL—Redistribution Layer 重新分布层
RCC—Resistor/Capacitor/Coupling
RPO—Resist Protection Oxide 抗氧化保护
STI—Shallow Trench Isolation 浅槽隔离
Salicide—Self Aligned Silicide 自对准多晶硅化物
SCR—Silicon-Controlled Rectifier 硅控整流器
TCD—Test-key Critical Dimension
TFR—Thin Film Resistor 薄膜电阻(new add)
UTM—Ultra thick Top Metal
WPE —Well Proximity Effect阱邻近效应
1.4 ESD相关
CDM—Charged Device Model 元件充电模型
ESD—Electro Static Discharge 静电放电
HBM—Human Body Model 人体模型
MM—Machine Model 机器模型
2. Package常见英文单词缩写
2.1 封装工艺相关
CoW—Chip On Wafer
CoWoS—Chip on Wafer on Substrate
FC—Flip Chip 倒装芯片
FIWLP—Fan-in Wafer Level Package
FOWLP—Fan-out Wafer Level Package
FOPLP—Fan-Out Panel Level Package
HBM—High Bandwidth Memory
InFO—Integrated Fan-Out
TSV—Through Silicon Via 硅通孔
UBM—Under Bump Mteallurgy 凸点下金属化层
WLCSP—Wafer Level Chip Scale Package
WoW—Wafer On Wafer
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